Epitaxial silicon carbide for X-ray detection

被引：62

作者：

Bertuccio, G ^{[1
]}

Casiraghi, R

Nava, F

机构：

[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy

[2] Univ Modena, Dipartimento Fis, I-41100 Modena, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 02期

关键词：

Schottky diodes; semiconductor radiation detector; silicon carbide; X-ray detectors;

D O I：

10.1109/23.915369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SLC). The devices have a junction area of 3 mm(2) on an n-type 4H-SiC layer 30 mum thick with a dopant concentration of 1.8 X 10(15)cm(-3) At 300K, the reverse current density of the best device varies between 2 pA/cm(2) and 18 pA/cm(2) as the mean electric field is increased from 40 kY/cm up to 170 kV/cm. The devices have been tested with X and gamma raysfrom Am-241; the best measured energy resolution is 2.7 keV FWHM at room temperature.

引用

页码：232 / 233

页数：2

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