Resolution degradation of semiconductor detectors due to carrier trapping

被引：15

作者：

Kozorezov, AG ^{[1
]}

Wigmore, JK

Owens, A

den Hartog, R

Peacock, A

Al-Jawhari, HA

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] European Space Agcy, Estec, Sci Payloads & Adv Concepts Off, SCIA, Noordwijk, Netherlands

[3] King Abdulaziz Univ, Dept Phys, Jeddah 21413, Saudi Arabia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 546卷 / 1-2期

关键词：

semiconductor X-ray detector; carrier dynamics; energy resolution;

D O I：

10.1016/j.nima.2005.03.026

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6-660 keV. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：209 / 212

页数：4

共 6 条

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KOZOREZOV AG, UNPUB JAP

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 497 (2-3) :359-369

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