Formation of high quality oxynitride gate dielectrics by high pressure thermal oxidation of Si in NO

被引：6

作者：

Song, SC ^{[1
]}

Lee, CH ^{[1
]}

Luan, HF ^{[1
]}

Kwong, DL ^{[1
]}

Gardner, M ^{[1
]}

Fulford, J ^{[1
]}

Allen, M ^{[1
]}

Bloom, J ^{[1
]}

Evans, R ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-65

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we report a novel low thermal budget process (<800 degrees C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >10X lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O-2.

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收藏

页码：65 / 70

页数：6

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