A hybrid mask-mould lithography scheme and its application in nanoscale organic thin film transistors

Nanoimprint lithography (NIL) has stimulated great interest in both academic research and industrial development due to its high resolution, high throughput and low cost advantages. Though NIL has been demonstrated to be very successful in replicating nanoscale features, it also has its limitations as a general lithography technique. Its fundamental moulding characteristics (i.e. physically displacing polymer materials) frequently lead to pattern defects when replicating arbitrary patterns, especially patterns with broad size distribution. To solve this problem, we have developed a combined nanoimprint and photolithography technique that uses a hybrid mould to achieve good pattern definitions. In this work, we applied this technique to fabricate finger-shaped nanoelectrodes, and demonstrated nanoscale pentacene organic thin film transistors (OTFTs). Methods of the hybrid mask-mould (HMM) fabrication and results on the device electrical characteristics are provided. With combined advantages of both photolithography and NIL, and the applicability to general nanoscale device and system fabrication, this method can become a valuable choice for low cost mass production of micro- and nanoscale structures, devices and systems.