Enhancement effect of germanium on oxygen precipitation in Czochralski silicon

被引：29

作者：

Chen, JH ^{[1
]}

Yang, DR ^{[1
]}

Li, H ^{[1
]}

Ma, XY ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2188130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen precipitation in germanium (Ge)-doped Czochralski (CZ) silicon has been investigated through a series of isothermal anneals at temperatures ranging from 550 to 950 degrees C. It is found that the nucleation of oxygen precipitates can be enhanced in a wide temperature range and the onset temperature for precipitate nucleation can be increased by the germanium doping. Furthermore, it is also revealed that the oxygen precipitates with a higher density and smaller sizes can be formed in germanium-doped CZ silicon in comparison with those in conventional CZ silicon. These two phenomena are ascribed to the reduction in the critical radius for oxygen precipitation and the increase in the concentration of heterogeneous nuclei due to the germanium doping.

引用

页数：5

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