Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt

被引：11

作者：

Dai, JY ^{[1
]}

Mangelinck, D ^{[1
]}

Lahiri, SK ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期

关键词：

D O I：

10.1063/1.124968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for 1 min at 500 degrees C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi. (C) 1999 American Institute of Physics. [S0003-6951(99)03441-5].

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页码：2214 / 2216

页数：3

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