NISI FORMATION AT THE SILICIDE/SI INTERFACE ON THE NIPT/SI SYSTEM

被引：35

作者：

OTTAVIANI, G

TU, KN

CHU, WK

HUNG, LS

MAYER, JW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

[3] CORNELL UNIV,DEPT MAT SCI,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4903 / 4906

页数：4

共 12 条

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[4] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].

OTTAVIANI, G ;

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[5] DISSOCIATION OF PTSI, NISI, AND PDGE IN PRESENCE OF PT, NI AND PD FILMS, RESPECTIVELY [J].

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[6] PHASE-SEPARATION IN ALLOY-SI INTERACTION [J].

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[7]

OTTAVIANI G, 1981, RELIABILITY DEGRADAT, pCH2

[8]

OTTAVIANI G, 1981, J VAC SCI TECHNOL, V18, P917

[9]

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[10] COMPOSITION PROFILES AND SCHOTTKY-BARRIER HEIGHTS OF SILICIDES FORMED IN NIPT ALLOY-FILMS [J].

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TERRY, LE .

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