DISSOCIATION OF PTSI, NISI, AND PDGE IN PRESENCE OF PT, NI AND PD FILMS, RESPECTIVELY

被引:28
作者
OTTAVIANI, G
MAJNI, G
CANALI, C
机构
[1] Istituto di Fisica, Università di Modena, Modena, I-41 100
来源
APPLIED PHYSICS | 1979年 / 18卷 / 03期
关键词
81.10.Jt; 81.30Bx;
D O I
10.1007/BF00885516
中图分类号
O59 [应用物理学];
学科分类号
摘要
4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni, PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the original compound/metal interface in the temperature range considered, 280-325°C for Pt2Si, 325°C for Ni2Si and 180-260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor {Mathematical expression} higher than in the usual semiconductor-metal structure. © 1979 Springer-Verlag.
引用
收藏
页码:285 / 289
页数:5
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