COMPOSITION PROFILES AND SCHOTTKY-BARRIER HEIGHTS OF SILICIDES FORMED IN NIPT ALLOY-FILMS

被引:33
作者
THOMAS, S [1 ]
TERRY, LE [1 ]
机构
[1] MOTOROLA INC,SEMICOND PROD DIV,5005 E MCDOWELL RD,PHOENIX,AZ 85008
关键词
D O I
10.1063/1.322316
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:301 / 307
页数:7
相关论文
共 28 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]   FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].
ANDREWS, JM ;
KOCH, FB .
SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&
[3]   ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].
ANDREWS, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984
[4]   AUGER SPECTROSCOPY OF SILICON [J].
BISHOP, HE ;
RIVIERE, JC ;
TAYLOR, NJ .
SURFACE SCIENCE, 1969, 17 (02) :462-&
[5]   EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES [J].
BLATTNER, RJ ;
EVANS, CA ;
LAU, SS ;
MAYER, JW ;
ULLRICH, BM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1732-1736
[6]   IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].
CHU, WK ;
LAU, SS ;
MAYER, JW ;
MULLER, H .
THIN SOLID FILMS, 1975, 25 (02) :393-402
[7]   PLATINUM SILICIDE FORMATION - ELECTRON-SPECTROSCOPY OF PLATINUM-PLATINUM SILICIDE INTERFACE [J].
DANYLUK, S ;
MCGUIRE, GE .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5141-5144
[8]   AUGER ELECTRON SPECTROSCOPY OF SI [J].
GRANT, JT ;
HAAS, TW .
SURFACE SCIENCE, 1970, 23 (02) :347-&
[9]  
GREGORY P, 1975, B AM PHYS SOC, V20, P425
[10]   CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY [J].
HAAS, TW ;
GRANT, JT ;
DOOLEY, GJ .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1853-&