Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

被引：28

作者：

Jia, R

Jiang, DS

Liu, HY

Wei, YQ

Xu, B

Wang, ZG

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 2-3期

基金：

中国国家自然科学基金;

关键词：

nanostructures; molecular beam epitaxy; semiconductor III-V materials; laser diodes;

D O I：

10.1016/S0022-0248(01)01721-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have fabricated self-organized InAs/GaAs quantum dots (QDs) capped by 1 nm In0.2Al0.8As and 5 nm In0.2Ga0.8As strain-reducing layer (SRL). The luminescence emission at a long wavelength of 1.33 mum with narrower half width is realized. A wider energy separation between the ground and first excited radiative transitions of up to 102meV was observed at room temperature. Furthermore, the comparative study proves that luminescence properties of InAs/GaAs QDs overgrown with combined InAlAs and InGaAs SRLs are much better than that of one capped with InGaAs or InAlAs SRL. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：354 / 358

页数：5

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