Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

被引：29

作者：

Liu, HY ^{[1
]}

Xu, B ^{[1
]}

Chen, YH ^{[1
]}

Ding, D ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.1318371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

引用

页码：5433 / 5436

页数：4

共 23 条

[1]

Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920

[2] COHERENT ISLANDS AND MICROSTRUCTURAL EVOLUTION [J].

DRUCKER, J .

PHYSICAL REVIEW B, 1993, 48 (24) :18203-18206

[3] Lasing in quantum-dot ensembles with sharp adjustable electronic shells [J].

Fafard, S ;

Wasilewski, ZR ;

Allen, CN ;

Hinzer, K ;

McCaffrey, JP ;

Feng, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :986-988

[4] Surface segregation in (Ga,In)As/GaAs quantum boxes [J].

Grandjean, N ;

Massies, J ;

Tottereau, O .

PHYSICAL REVIEW B, 1997, 55 (16) :10189-10192

[5] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[6] Excitation transfer in self-organized asymmetric quantum dot pairs [J].

Heitz, R ;

Mukhametzhanov, I ;

Chen, P ;

Madhukar, A .

PHYSICAL REVIEW B, 1998, 58 (16) :R10151-R10154

[7] Excited states and energy relaxation in stacked InAs/GaAs quantum dots [J].

Heitz, R ;

Kalburge, A ;

Xie, Q ;

Grundmann, M ;

Chen, P ;

Hoffmann, A ;

Madhukar, A ;

Bimberg, D .

PHYSICAL REVIEW B, 1998, 57 (15) :9050-9060

[8] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[9] Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Joyce, BA ;

Jones, TS .

PHYSICAL REVIEW B, 1998, 58 (24) :15981-15984

[10] DISLOCATION INJECTION IN STRAINED MULTILAYER STRUCTURES [J].

KAMAT, SV ;

HIRTH, JP .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6844-6850

← 1 2 3 →