Optical transitions at the Si(111)-Pb(root 3x root 3) mosaic phase

被引：2

作者：

Cricenti, A

Gothelid, M

LeLay, G

机构：

[1] CTR RECH MECAN CROISSANCE CRISTALLINE,CNRS,UPR 7251,F-13288 MARSEILLE 9,FRANCE

[2] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE

来源：

SURFACE SCIENCE | 1997年 / 382卷 / 1-3期

关键词：

lead; optical reflectivity; photoemission; silicon;

D O I：

10.1016/S0039-6028(97)00130-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optical transitions between surface state bands have been detected on the Si(111)-Pb(root 3 x root 3) mosaic phase by means of surface differential reflectivity (SDR) in the energy range between 1.3 and 3.8 eV. The SDR spectrum, obtained between the clean and the hydrogenated surface, presents a broad structure in this energy range with a maximum at 3.0 eV. The spectrum has been deconvolved into three Gaussian singlets at energies 1.8, 2.5 and 3.05 eV. These transitions have been, tentatively, assigned to different points in the surface Brillouin zone. No contribution from the hydrogenated surface is expected. as observed by angle resolved photoemission. (C) 1997 Elsevier Science B.V.

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页码：182 / 186

页数：5

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