LASER-INDUCED BAND-BENDING VARIATION ON ROOM-TEMPERATURE CDTE(110)1X1 SURFACES OBSERVED IN PHOTOEMISSION AND THROUGH THE FRANZ-KELDISH EFFECT IN SURFACE DIFFERENTIAL REFLECTIVITY

被引:8
作者
CRICENTI, A [1 ]
ORLOWSKI, BA [1 ]
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 04期
关键词
D O I
10.1103/PhysRevB.51.2322
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A laser-induced band-bending variation on ultrahigh vacuum cleaved CdTe(110)1×1 surfaces kept at room temperature has been observed both in angle-resolved photoelectron spectroscopy (ARPES) and, through the Franz-Keldish (FK) effect, in surface-differential reflectivity. Through ARPES spectra, the shift of the Fermi level, between the sample obscured and illuminated with an Ar+ laser power of 500 mW has been determined to be 0.2 eV. The FK effect has been observed at the E0 bulk critical point and studied as a function of laser power, showing a linear increase in its oscillation amplitude up to a power of 400 mW. Upon switching off the laser, the FK effect disappears exponentially with a time constant of about 1300 s. A surface photovoltage induced by the helium lamp has also been observed. © 1995 The American Physical Society.
引用
收藏
页码:2322 / 2325
页数:4
相关论文
共 18 条
[1]   SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].
ALONSO, M ;
CIMINO, R ;
HORN, K .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1947-1950
[2]   INFRARED PHOTOVOLTAIC DETECTORS UTILIZING HG1-XMNX TE AND HG1-X-YCDXMNY TE ALLOYS [J].
BECLA, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2014-2018
[3]  
CARDONA M, 1967, PHYS REV, V154, P96
[4]   CONFIRMATION OF THE TEMPERATURE-DEPENDENT PHOTOVOLTAIC EFFECT ON FERMI-LEVEL MEASUREMENTS BY PHOTOEMISSION SPECTROSCOPY [J].
CHANG, S ;
VITOMIROV, IM ;
BRILLSON, LJ ;
RIOUX, DF ;
KIRCHNER, PD ;
PETTIT, GD ;
WOODALL, JM ;
HECHT, MH .
PHYSICAL REVIEW B, 1990, 41 (17) :12299-12302
[5]   SCHOTTKY-BARRIER AND SURFACE PHOTOVOLTAGE INDUCED BY SYNCHROTRON-RADIATION IN GAP(110)/AG [J].
CHIARADIA, P ;
BONNET, JE ;
FANFONI, M ;
GOLETTI, C ;
LAMPEL, G .
PHYSICAL REVIEW B, 1993, 47 (20) :13520-13526
[6]   THE EFFECT OF SURFACE-STATES AND BAND BENDING CHANGE ON REFLECTIVITY OF CLEAVED GAAS(110) AND GAP(110) [J].
CICCACCI, F ;
SELCI, S ;
CHIAROTTI, G ;
CHIARADIA, P ;
CRICENTI, A .
SURFACE SCIENCE, 1986, 168 (1-3) :28-34
[7]   CLEAN AND OXYGEN COVERED INP(110) SURFACES DIFFERENTIAL REFLECTIVITY [J].
CRICENTI, A ;
SELCI, S ;
FELICI, AC ;
FERRARI, L ;
GAVRILOVICH, A ;
GOLETTI, C ;
CHIAROTTI, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1026-1028
[8]   PHOTOEMISSION-BASED PHOTOVOLTAGE PROBE OF SEMICONDUCTOR SURFACE AND INTERFACE ELECTRONIC-STRUCTURE [J].
DEMUTH, JE ;
THOMPSON, WJ ;
DINARDO, NJ ;
IMBIHL, R .
PHYSICAL REVIEW LETTERS, 1986, 56 (13) :1408-1411
[9]  
DHARMADASA IM, 1989, APPL PHYS LETT, V54, P9
[10]   OXYGEN-INDUCED FRANZ-KELDYSH EFFECT AND SURFACE STATES ON GAAS(110) SURFACES IN ELLIPSOMETRY [J].
DORN, R ;
LUTH, H .
PHYSICAL REVIEW LETTERS, 1974, 33 (17) :1024-1027