Effect of substrate temperature on structural, optical and electrical properties of ZnO thin films deposited by pulsed laser deposition

被引：45

作者：

Kang, Seong Jun ^{[1
]}

Joung, Yang Hee ^{[1
]}

Shin, Hyun Ho ^{[2
]}

Yoon, Yung Sup ^{[2
]}

机构：

[1] Chonnam Natl Univ, Dept Elect & Semicond Engn, Yosu 550749, South Korea

[2] Inha Univ, Dept Elect, Inchon 402751, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 11期

关键词：

D O I：

10.1007/s10854-007-9469-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were grown by the pulse laser deposition (PLD) method using Si (100) substrates at various substrate temperatures. The influence of the substrate temperature on the structural, optical, and electrical properties of the ZnO thin films was investigated. All of the thin films showed c-axis growth perpendicular to the substrate surface. At a substrate temperature of 500 degrees C, the ZnO thin film showed the highest (002) peak with a full width at half maximum (FWHM) of 0.39 degrees. The X-ray Photoelectron Spectroscopy (XPS) study showed that Zn was in excess irrespective of the substrate temperature and that the thin film had a nearly stoichiometrical composition at a substrate temperature of 500 degrees C. The photoluminescence (PL) investigation showed that the narrowest UV FWHM of 15.8 nm and the largest ratio of the UV peak to the deep-level peak of 32.9 were observed at 500 degrees C. Hall effect measurement systems provided information about the carrier concentration, mobility and resistivity. At a substrate temperature of 500 degrees C, the Hall mobility was the value of 37.4 cm(2)/Vs with carrier concentration of 1.36 x 10(18) cm(-3) and resistivity of 2.08 x 10(-1) Omega cm.

引用

页码：1073 / 1078

页数：6

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