Rapid, reversible, sensitive porous silicon gas sensor

被引：105

作者：

Seals, L ^{[1
]}

Gole, JL

Tse, LA

Hesketh, PJ

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Mech Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.1436556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of a sensitive porous silicon (PS) gas sensor which utilizes photoluminescence induced electroless metallization as a means of obtaining a highly efficient electrical contact has been demonstrated for the detection of HCl, NH3, and NO at the 10 ppm level. The problem of spreading resistance (kOmega-MOmega) is overcome as low resistance contacts similar to20-100 Omega are made to the mesoporous PS structure through electroless gold plating. The response of this device, which operates at a bias voltage of 1-10 mV, is rapid and reversible. (C) 2002 American Institute of Physics.

引用

页码：2519 / 2523

页数：5

共 40 条

[31] THE ELECTRICAL-PROPERTIES OF POROUS SILICON PRODUCED FROM N(+) SILICON SUBSTRATES [J].