Imaging of oxide and interface charges in SiO2-Si

被引：5

作者：

Ludeke, R ^{[1
]}

Cartier, E ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

SiO2 gate oxide; oxide charge; interface charge; single charge detection; atomic force microscope;

D O I：

10.1016/S0167-9317(01)00607-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charges arising from single electrons and holes localized in SiO2 gate oxides and at the SiO2-Si(111) interface were imaged with a non-contact atomic force microscope (AFM). The polarity of the charge was ascertained from simultaneously recorded Kelvin images. The bias dependent position of the Fermi level controls the trap occupancy in general, as well as the state of charge of interface states (P-b centers) and their polarity. Temporary trap occupancy caused by the extreme band bending beneath the AFM tip can lead to an appreciable enhancement in the apparent resolution of the charge image. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：259 / 263

页数：5

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