Spin-dependent transport in amorphous silicon thin-film transistors

被引：6

作者：

Graeff, CFO ^{[1
]}

Kawachi, G ^{[1
]}

Brandt, MS ^{[1
]}

Stutzmann, M ^{[1
]}

Powell, MJ ^{[1
]}

机构：

[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00059-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 x 100 mu m(2) is demonstrated.

引用

页码：1117 / 1120

页数：4

共 7 条

[1] SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON [J].