Epitaxial growth of patterned SrBi2Ta2O9 lines by channel stamping

被引:21
作者
Kim, JH
Lange, FF
Cheon, CI
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA
[3] Hoseo Univ, Dept Mat & Chem Engn, Chungnam 336795, South Korea
基金
美国国家科学基金会;
关键词
D O I
10.1557/JMR.1999.0161
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (001) out-of-plane orientation were grown on a (001) SrTiO3 substrate by the novel "channel stamping" method. Parallel channels in a poly(dimethylsiloxane) stamp were filled with a metalorganic precursor solution by spin coating. After solvent evaporation, the solid precursor within the channels was transferred to the substrate by stamping. Stamped precursor lines were pyrolyzed at 350 degrees C/1 h and then heated to 850 degrees C/1 h. It was shown by x-ray diffraction and scanning electron microscopy that patterned SET lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-plane orientation.
引用
收藏
页码:1194 / 1196
页数:3
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