40 years MOS technology - from empiricism to science

被引：17

作者：

Balk, P ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, NL-2600 GB Delft, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00327-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper summarizes the development of the MOS field effect technology from the early beginnings. It will deal with its empirical basis and present some examples of the way the technology progressed: the search for the ideal semiconductor-dielectric system, the continuous battle against impurities and the tenacity with which the problem of the interaction of hydrogen with Si/SiO2 interfacial defects has defied complete interpretation. A few highlights from the period under discussion will conclude the review.

引用

页码：3 / 6

页数：4

共 39 条

[1] Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing [J].

Afanas'ev, VV ;

Stesmans, A .

APPLIED PHYSICS LETTERS, 1998, 72 (01) :79-81

[2]

AFANAS'EV VV, 1993, ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, P415

[3] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[4]

[Anonymous], 1925, Lilienfeld Julius Edgar U.S. Patent, Patent No. [1,745,175, 1745175]

[5] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[6] PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J].

BALK, P ;

ELDRIDGE, JM .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1558-+

[7] DIELECTRICS IN MICROELECTRONICS - PROBLEMS AND PERSPECTIVES [J].

BALK, P .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :1-9

[8]

BALK P, 1965, EL DIV ECS M OCT 194, P29

[9]

BALK P, 1965, EL DIV ECS M MAY 196, P238

[10] PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI/SIO2 INTERFACE BY ATOMIC-HYDROGEN [J].

CARTIER, E ;

STATHIS, JH ;

BUCHANAN, DA .

APPLIED PHYSICS LETTERS, 1993, 63 (11) :1510-1512

← 1 2 3 4 →