STM studies of Si(hhm) surfaces with m/h=1.4-1.5

被引:10
作者
Suzuki, T [1 ]
Minoda, H [1 ]
Tanishiro, Y [1 ]
Yagi, K [1 ]
Kitada, H [1 ]
Shimizu, N [1 ]
机构
[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN
基金
日本学术振兴会;
关键词
scanning tunneling microscopy; silicon; vicinal single crystal surfaces;
D O I
10.1016/0039-6028(96)00061-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We carried out STM observations of (hhm) (m/h = 1.4-1.5) surfaces which had been found in REM-RHEED studies. The surface has a long period along the [<mm(2h)over bar>] direction. The period is composed of three (111) terraces. Two wide terraces have structures like the 7 x 7 DAS model with a 7-fold period along the [110] direction. The narrow one has a 2-fold period along the (110) direction. The 7-fold period has weak correlation along the [<mm(2h)over bar>] direction. We propose a surface structure model of the (hhm) (m/h = 1.5) surface from the STM images. A step that causes a phase shift of the surface period, which is closely related to the modulation of the period observed by REM, is also observed.
引用
收藏
页码:73 / 77
页数:5
相关论文
共 21 条
  • [1] QUASI-PERIODIC NANOSCALE FACETING OF HIGH-INDEX SI SURFACES
    BASKI, AA
    WHITMAN, LJ
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (06) : 956 - 959
  • [2] THE EQUILIBRIUM SHAPE OF SILICON
    BERMOND, JM
    METOIS, JJ
    EGEA, X
    FLORET, F
    [J]. SURFACE SCIENCE, 1995, 330 (01) : 48 - 60
  • [3] ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT
    DABROWSKI, J
    MUSSIG, HJ
    WOLFF, G
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (12) : 1660 - 1663
  • [4] QUANTIZATION OF TERRACE WIDTHS ON VICINAL SI(111)
    GOLDBERG, JL
    WANG, XS
    WEI, J
    BARTELT, NC
    WILLIAMS, ED
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 1868 - 1873
  • [5] HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF PHASE-TRANSITIONS AND RECONSTRUCTION ON A VICINAL SI(111) SURFACE
    HIBINO, H
    FUKUDA, T
    SUZUKI, M
    HOMMA, Y
    SATO, T
    IWATSUKI, M
    MIKI, K
    TOKUMOTO, H
    [J]. PHYSICAL REVIEW B, 1993, 47 (19): : 13027 - 13030
  • [6] TRANSIENT STEP BUNCHING ON A VICINAL SI(111) SURFACE
    HIBINO, H
    OGINO, T
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (05) : 657 - 660
  • [7] LEED INVESTIGATIONS ON PURE AND METAL TREATED VICINAL SILICON(111)
    JENTZSCH, F
    HENZLER, M
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (02): : 119 - 123
  • [8] AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE WITH A NEW INCHWORM MECHANISM
    SHIMIZU, N
    KIMURA, T
    NAKAMURA, T
    UMEBU, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 333 - 335
  • [9] TRICRITICALITY IN THE ORIENTATIONAL PHASE-DIAGRAM OF STEPPED SI(113) SURFACES
    SONG, S
    MOCHRIE, SGJ
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (07) : 995 - 998
  • [10] STRUCTURE OF HIGH-INDEX CLEAN SI SURFACE STUDIED BY REM (HHM) SURFACE WITH M/H=1.4 TO 1.5
    SUZUKI, T
    YAGI, K
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 146 (01): : 243 - 249