One step convenient synthesis of crystalline β-Si3N4

被引：15

作者：

Bai, YJ ^{[1
]}

Bian, J ^{[1
]}

Wang, CG ^{[1
]}

Zhu, B ^{[1
]}

Qi, YX ^{[1
]}

Wang, YX ^{[1
]}

Liu, YX ^{[1
]}

Geng, GL ^{[1
]}

机构：

[1] Shandong Univ, Key Lab Liquid Struct & Hered Mat, Minist Educ, Jinan 250061, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2005年 / 15卷 / 45期

关键词：

D O I：

10.1039/b510699k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Well-crystallized beta-Si3N4 was directly prepared at an initial reaction temperature of 150 degrees C through the reaction of SiCl4 and NaN3 in the presence of a small amount of CCl4 characterization by X-ray diffraction, high-resolution electron microscopy, X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy indicates that the product synthesized is crystalline beta-Si3N4. The yield of beta-Si3N4 is about 86% based on the amount of precursor SiCl4 used at the initial reaction temperature of 150 degrees C, and is more than 90% at the reaction temperature of 200 degrees C with the product beta-Si3N4 in high crystallinity. The dominant morphology of the product is short rods with the growth axis along the [001] direction. The formation mechanism of crystalline beta-Si3N4 was discussed briefly, and the role of CCl4 in the formation process of beta-Si3N4 was analyzed.

引用

页码：4832 / 4837

页数：6

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