Towards an Airborne High Temperature SiC Inverter

被引:32
作者
Bergogne, Dominique [1 ]
Morel, Herve [1 ]
Planson, Dominique [1 ]
Tournier, Dominique [1 ]
Bevilacqua, Pascal [1 ]
Allard, Bruno [1 ]
Meuret, Regis [2 ,3 ]
Vieillard, Sebastien [2 ,3 ]
机构
[1] INSA Lyon, Ampere Lab, F-69621 Villeurbanne, France
[2] Hispano Suiza, SAFRAN Grp, F-77551 Moissy Cramaye, France
[3] Stephane Rael, Farid MeibodyTabar, GREEN, ENSEM, F-54516 Vandoeuvre Les Nancy, France
来源
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10 | 2008年
关键词
D O I
10.1109/PESC.2008.4592442
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SiC devices enable for high temperature operation of power converters. The paper describes the laboratory step by step work towards an airborne high temperature inverter 200C cooling source, 4 kVA power. From WET only' to 'full three phase power stage' tested up to 250C, including capacitor. Device samples are characterized in order to set the requirements for the gate driver and to evaluate maximum switchable power. Switching losses are measured using high precision shunt and voltage probes. A prototype is built and operation under full load (15A) is verified.
引用
收藏
页码:3178 / +
页数:2
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