A simplified reactive thermal evaporation method for indium tin oxide electrodes

被引：26

作者：

Belo, G. S. ^{[1
]}

da Silva, B. J. P. ^{[1
]}

de Vasconcelos, E. A. ^{[2
]}

de Azevedo, W. M. ^{[3
]}

da Silva, E. F., Jr. ^{[1
]}

机构：

[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

[2] Univ Fed Pernambuco, Ctr Acad Agreste, BR-55002970 Caruaru, PE, Brazil

[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 03期

关键词：

ITO; Transparent electrode; Reactive thermal evaporation;

D O I：

10.1016/j.apsusc.2008.07.020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium tin oxide (ITO) films approximately 120 nm thick were deposited onto unheated glass substrates by using reactive thermal evaporation (RTE) and in situ post-evaporation annealing in oxygen. We show that this simplified method can be used to produce high quality ITO thin films with low electrical resistivity (10 (3) Omega cm) and high transmittance (approximately 80% at 550 nm). The refractive index is approximately 2.0 and the direct optical band gap of the films (above 3.0 eV) is in good agreement with previously reported values. Since this deposition method does not require heating the substrates or furnace annealing at high temperatures, it can be advantageous when it is necessary to decrease the thermal budget on underlying devices or layers. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：755 / 757

页数：3

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