Enhanced Charge Transport in Polymer Thin-Film Transistors Prepared by Contact Film Transfer Method

被引:67
作者
Wei, Qingshuo [1 ]
Miyanishi, Shoji [1 ]
Tajima, Keisuke [1 ]
Hashimoto, Kazuhito [1 ,2 ]
机构
[1] Univ Tokyo, Dept Appl Chem, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy, HASHIMOTO Light Energy Convers Project, Bunkyo Ku, Tokyo 1138656, Japan
关键词
Organic field-effect transistor; film transfer; conjugated polymer; interfacial property; FIELD-EFFECT MOBILITY; REGIOREGULAR POLYTHIOPHENE; PI-INTERACTION; CHAIN-LENGTH; POLY(3-HEXYLTHIOPHENE); PERFORMANCE; INTERFACES; SURFACE;
D O I
10.1021/am9005572
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The charge-carrier transport in the structures formed at the surface of various conjugated polymer films is investigated by constructing oragnic thin film transistors using a novel and simple contact film transfer method. Thin-film transistors prepared by this transfer process have higher field-effect mobility values compared with conventional spin-coated devices, for all the studied polmers. In contrast to previous reports the hole mobility in regioregular poly(3-alkylthiophene)s does not depend on the length of the alkyl chain when the contact film transfer method is used. These results suggest that the thin thiophene rings adopt a highly ordered edge on orientation and strong interchain pi-pi interactions spontaneously, form at the polymer/air interface during the spin-coating
引用
收藏
页码:2660 / 2666
页数:7
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