Picosecond time-resolved luminescence studies of recombination processes in CdTe

被引：6

作者：

Ghislotti, G

Ielmini, D

Riedo, E

Martinelli, M

Dellagiovanna, M

机构：

[1] Pirelli Cavi & Sistemi, Photon Components C2692, I-20126 Milan, Italy

[2] Politecn Milan, Dipartimento Ingn Nucl, I-20133 Milan, Italy

[3] INFM, Lab TASC, Trieste, Italy

[4] Politecn Milan, Dipartimento Ingn Elettr & Informaz, I-20133 Milan, Italy

[5] CORECOM, I-20131 Milan, Italy

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 111卷 / 04期

关键词：

semiconductors; recombination and trapping; luminescence; time-resolved optical spectroscopy;

D O I：

10.1016/S0038-1098(99)00184-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High resistivity CdTe:In samples were studied by means of continuous and picosecond time-resolved photoluminescence (PL). The detected PL signal is affected by non-radiative trapping, while radiative recombination has an excitonic character. Two recombination lifetimes describe the measured time-resolved PL spectra, the first (30-60 ps) takes into account fast nonradiative recombination; the second lifetime is in the range 200-300 ps and can be related to exciton decay. (C) 1999 Published by Elsevier Science Ltd, All rights reserved.

引用

页码：211 / 216

页数：6

共 22 条

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