X-ray diffuse scattering of p-type porous silicon

被引:10
作者
Buttard, D
Bellet, D
Dolino, G
Baumbach, T
机构
[1] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38502 St Martin Dheres, France
[2] Fraunhofer Inst Zerstorungsfreie Prufverfahren, D-01326 Dresden, Germany
关键词
D O I
10.1063/1.1429791
中图分类号
O59 [应用物理学];
学科分类号
摘要
An x-ray diffuse scattering investigation of p-type porous silicon (PS) is reported. Synchrotron radiation and laboratory measurements of the x-ray diffuse scattering at small and large scattering wave-vector q values are presented. At small q values and for p(-)-type material, small isotropic crystallites of a few nanometers diameter are shown, whereas for p(+)-type material the main cylindrical crystallites are larger. At large q values the fine p(+) PS structure is investigated and reveals the presence of small spherical crystallites around the main cylindrical crystallites. The elastic relaxation of silicon crystallites in the porous structure is also presented for oxidized and for as-formed samples, using reciprocal space maps. PS superlattice diffuse scattering is then observed. Finally, these results are discussed in relation to previous x-ray studies and other methods of structural observation. (C) 2002 American Institute of Physics.
引用
收藏
页码:2742 / 2752
页数:11
相关论文
共 54 条
[11]   Thin layers and multilayers of porous silicon: X-ray diffraction investigation [J].
Buttard, D ;
Bellet, D ;
Dolino, G ;
Baumbach, T .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :5814-5822
[12]   X-ray-diffraction investigation of the anodic oxidation of porous silicon [J].
Buttard, D ;
Bellet, D ;
Dolino, G .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :8060-8070
[13]  
Buttard D, 1999, SOLID STATE COMMUN, V109, P1, DOI 10.1016/S0038-1098(98)00531-6
[14]  
BUTTARD D, 1997, THESIS J FOURIER GRE
[15]  
CANHAM L, 1997, DATAREVIEW SERIES, V18, P106
[16]  
Canham L. T., 1997, DATAREVIEW SERIES, V18
[17]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[18]  
CHAMARD V, 2000, THESIS U J FOURIER G
[19]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[20]   Adsorption strains in porous silicon [J].
Dolino, G ;
Bellet, D ;
Faivre, C .
PHYSICAL REVIEW B, 1996, 54 (24) :17919-17929