Electro-conductive nanotubular sheet of indium tin oxide as fabricated from the cellulose template

被引：45

作者：

Aoki, Y ^{[1
]}

Huang, JG ^{[1
]}

Kunitake, T ^{[1
]}

机构：

[1] RIKEN, Frontier Res Syst, Topochem Design Lab, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2006年 / 16卷 / 03期

关键词：

D O I：

10.1039/b512225b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Free-standing, nanotubular ITO sheet with different In/Sn ratios was fabricated by the surface sol-gel process using cellulose filter paper as template. The resulting materials have a hierarchical structure originating from the morphology of cellulosic paper, and the ITO nanotubes are composed of interconnected layers of ITO nanocrystals of a few nanometres. Semiconducting behavior was observed at temperatures above room temperature, probably because electronic migration is strongly affected by the scattering at the boundary between nanocrystals. The ITO sheet with In/Sn ratio of 93.5/6.5 showed an intrinsic electronic conductivity (0.53 S cm(-1)) that is higher than those of other nanostructured ITO, and a very low apparent density (3.3% of neat ITO). These features indicate that the nanotubular ITO sheet has a potential use for chemical sensors and other devices.

引用

页码：292 / 297

页数：6

共 50 条

[41] Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique [J].

Bel, Hadj Tahar, Radhouane ;

Ban, Takayuki ;

Ohya, Yutaka ;

Takahashi, Yasutaka .

1998, (83)

[42] Amorphous ITO thin films prepared by DC sputtering for electrochromic applications [J].

Teixeira, V ;

Cui, HN ;

Meng, LJ ;

Fortunato, E ;

Martins, R .

THIN SOLID FILMS, 2002, 420 :70-75

[43]

Van der Pauw L. J., 1958, PHILLIPS TECHNICAL R, V20, P220, DOI DOI 10.4236/JMP.2013.411179

[44] Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization [J].

Wan, Q ;

Song, ZT ;

Feng, SL ;

Wang, TH .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4759-4761

[45] ELECTRICAL PROPERTIES OF SINGLE CRYSTALS OF INDIUM OXIDE [J].

WEIHER, RL .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2834-&

[46] Oxide semiconductor gas sensors [J].

Yamazoe, N ;

Sakai, G ;

Shimanoe, K .

CATALYSIS SURVEYS FROM ASIA, 2003, 7 (01) :63-75

[47] High-performance organic light-emitting diodes using ITO anodes grown on plastic by room-temperature ion-assisted deposition [J].

Yang, Y ;

Huang, QL ;

Metz, AW ;

Ni, J ;

Jin, S ;

Marks, TJ ;

Madsen, ME ;

DiVenere, A ;

Ho, ST .

ADVANCED MATERIALS, 2004, 16 (04) :321-+

[48] Growth mechanism of vapor-liquid-solid (VLS) grown indium tin oxide (ITO) whiskers along the substrate [J].

Yumoto, H ;

Sako, T ;

Gotoh, Y ;

Nishiyama, K ;

Kaneko, T .

JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) :136-140

[49] Scattering mechanisms of charge carriers in transparent conducting oxide films [J].

Zhang, DH ;

Ma, HL .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (05) :487-492

[50] Detection of NO2 down to ppb levels using individual and multiple In2O3 nanowire devices [J].

Zhang, DH ;

Liu, ZQ ;

Li, C ;

Tang, T ;

Liu, XL ;

Han, S ;

Lei, B ;

Zhou, CW .

NANO LETTERS, 2004, 4 (10) :1919-1924

← 1 2 3 4 5 →