Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization

被引：59

作者：

Wan, Q ^{[1
]}

Song, ZT

Feng, SL

Wang, TH

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing 200080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1808877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An in situ doping approach was adopted to synthesize single-crystalline Sn-doped In2O3 [indium tin oxide (ITO)] nanowhiskers. Similar synthesis strategy could be used in the production of various doped metal oxide nanowhiskers. The growth mode of ITO nanowhiskers was discussed based on a self-catalytic vapor-liquid-solid growth mechanism. At room temperature, a photoluminescence peak at 510 nm was observed, which was likely related to the surface defects of ITO nanowhiskers. In air ambient, the resistivity of individual ITO whisker was measured to be 0.40 Omega cm, which was much higher than that of ITO films. A possible explanation for the high resistivity was proposed based on the influence of surface oxygen absorption. (C) 2004 American Institute of Physics.

引用

页码：4759 / 4761

页数：3

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