A spiral-shaped microcavity heterojunction laser diode fabricated with InGaN multiple quantum wells is demonstrated to operate under current injection conditions and emit unidirectionally. Room-temperature laser operation was achieved for microcavity disk radii ranging from 50 to 350 mum and threshold current densities as low as 4.6 kA/cm(2). Unidirectional laser emission is clearly revealed in the far-field pattern with the lateral divergence angle ranging from 60degrees to 75degrees. Output power of more than 25 mW was obtained for emission wavelengths near 400 nm. (C) 2004 American Institute of Physics.