Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

被引:146
作者
Kneissl, M
Teepe, M
Miyashita, N
Johnson, NM
Chern, GD
Chang, RK
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
关键词
D O I
10.1063/1.1691494
中图分类号
O59 [应用物理学];
学科分类号
摘要
A spiral-shaped microcavity heterojunction laser diode fabricated with InGaN multiple quantum wells is demonstrated to operate under current injection conditions and emit unidirectionally. Room-temperature laser operation was achieved for microcavity disk radii ranging from 50 to 350 mum and threshold current densities as low as 4.6 kA/cm(2). Unidirectional laser emission is clearly revealed in the far-field pattern with the lateral divergence angle ranging from 60degrees to 75degrees. Output power of more than 25 mW was obtained for emission wavelengths near 400 nm. (C) 2004 American Institute of Physics.
引用
收藏
页码:2485 / 2487
页数:3
相关论文
共 14 条
[1]   Ultra-high-Q toroid microcavity on a chip [J].
Armani, DK ;
Kippenberg, TJ ;
Spillane, SM ;
Vahala, KJ .
NATURE, 2003, 421 (6926) :925-928
[2]  
CHANG RK, 1996, OPTICAL PROCESSES MI, pCH10
[3]   Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities [J].
Chang, SS ;
Rex, NB ;
Chang, RK ;
Chong, G ;
Guido, LJ .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :166-168
[4]   Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars [J].
Chern, GD ;
Tureci, HE ;
Stone, AD ;
Chang, RK ;
Kneissl, M ;
Johnson, NM .
APPLIED PHYSICS LETTERS, 2003, 83 (09) :1710-1712
[5]   REFRACTIVE INDEX OF GAN [J].
EJDER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :445-&
[6]   High-power directional emission from microlasers with chaotic resonators [J].
Gmachl, C ;
Capasso, F ;
Narimanov, EE ;
Nöckel, JU ;
Stone, AD ;
Faist, J ;
Sivco, DL ;
Cho, AY .
SCIENCE, 1998, 280 (5369) :1556-1564
[7]   Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates [J].
Kneissl, M ;
Bour, DP ;
Romano, L ;
Van de Walle, CG ;
Northrup, JE ;
Wong, WS ;
Treat, DW ;
Teepe, M ;
Schmidt, T ;
Johnson, NM .
APPLIED PHYSICS LETTERS, 2000, 77 (13) :1931-1933
[8]   Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching [J].
Kneissl, M ;
Bour, DP ;
Johnson, NM ;
Romano, LT ;
Krusor, BS ;
Donaldson, R ;
Walker, J ;
Dunnrowicz, C .
APPLIED PHYSICS LETTERS, 1998, 72 (13) :1539-1541
[9]   ROOM-TEMPERATURE LASING ACTION IN IN0.51GA0.49P/IN0.2GA0.8AS MICROCYLINDER LASER-DIODES [J].
LEVI, AFJ ;
SLUSHER, RE ;
MCCALL, SL ;
PEARTON, SJ ;
HOBSON, WS .
APPLIED PHYSICS LETTERS, 1993, 62 (17) :2021-2023
[10]   WHISPERING-GALLERY MODE MICRODISK LASERS [J].
MCCALL, SL ;
LEVI, AFJ ;
SLUSHER, RE ;
PEARTON, SJ ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :289-291