Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

被引：38

作者：

Kneissl, M ^{[1
]}

Bour, DP ^{[1
]}

Romano, L ^{[1
]}

Van de Walle, CG ^{[1
]}

Northrup, JE ^{[1
]}

Wong, WS ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Schmidt, T ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1312860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance and degradation characteristics of continuous-wave (cw) InGaN multiple-quantum-well laser diodes are reported. A cw threshold current as low as 62 mA was obtained for ridge-waveguide laser diodes on epitaxially laterally overgrown GaN on sapphire substrates grown by metalorganic chemical vapor deposition. Transmission electron microscopy reveals a defect density < 5x10(7) cm(-2) in the active region. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions, laser oscillation was observed up to 70 degrees C. The room-temperature cw operation lifetimes, measured at a constant output power of 2 mW, exceeded 15 h. From the temperature dependence of the laser diode lifetimes, an activation energy of 0.50 eV +/- 0.05 eV was determined. (C) 2000 American Institute of Physics. [S0003-6951(00)03339-8].

引用

页码：1931 / 1933

页数：3

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