Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

被引：45

作者：

Kneissl, M ^{[1
]}

Bour, DP ^{[1
]}

Van de Walle, CG ^{[1
]}

Romano, LT ^{[1
]}

Northrup, JE ^{[1
]}

Wood, RM ^{[1
]}

Teepe, M ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature continuous-wave (cw) operation is demonstrated with InGaN multiple-quantum-well laser diodes containing an asymmetric waveguide structure. Pulsed threshold current densities as low as 5.2 kA/cm(2) have been obtained for ridge-waveguide laser diodes grown on sapphire substrates by metal-organic chemical vapor deposition. For improved thermal management, the sapphire substrate was thinned and the devices were mounted p side up onto a copper heatsink. Under cw conditions at 20 degrees C, threshold current densities were 8.3 kA/cm(2) with threshold voltages of 6.3 V. The emission wavelength was 401 nm with output powers greater than 3 mW per facet. Under cw conditions, laser oscillation was observed up to 25 degrees C. The room-temperature cw operation lifetimes, for a constant current, exceeded one hour. (C) 1999 American Institute of Physics. [S0003-6951(99)03430-0].

引用

页码：581 / 583

页数：3

共 13 条

[1]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

[2]

BOUR DP, UNPUB

[3] Mode spacing "anomaly" in InGaN blue lasers [J].

Jiang, HX ;

Lin, JY .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1066-1068

[4] Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching [J].

Kneissl, M ;

Hofstetter, D ;

Bour, DP ;

Donaldson, R ;

Walker, J ;

Johnson, NM .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :846-849

[5] Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching [J].

Kneissl, M ;

Bour, DP ;

Johnson, NM ;

Romano, LT ;

Krusor, BS ;

Donaldson, R ;

Walker, J ;

Dunnrowicz, C .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1539-1541

[6] Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode [J].

Kobayashi, T ;

Nakamura, F ;

Naganuma, K ;

Tojyo, T ;

Nakajima, H ;

Asatsuma, T ;

Kawai, H ;

Ikeda, M .

ELECTRONICS LETTERS, 1998, 34 (15) :1494-1495

[7] Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on S1C substrate [J].

Kuramata, A ;

Kubota, S ;

Soejima, R ;

Domen, K ;

Horino, K ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11B) :L1373-L1375

[8] Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact [J].

Kuramoto, M ;

Sasaoka, C ;

Hisanaga, Y ;

Kimura, A ;

Yamaguchi, AA ;

Sunakawa, H ;

Kuroda, N ;

Nido, M ;

Usui, A ;

Mizuta, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B) :L184-L186

[9] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :211-213

[10] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4056-4058

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