Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition

被引：9

作者：

Bae, JW ^{[1
]}

Lee, SW

Song, KH

Park, JI

Park, KJ

Ko, YW

Yeom, GY

机构：

[1] Sungkyunkwan Univ, Dept Engn Math, Suwon 440746, Kyunggi Do, South Korea

[2] Myongji Univ, Dept Chem, Yongin 449728, Kyunggi Do, South Korea

[3] Natl Inst Technol & Qual, Dept Inorgan Chem, Kwacheon 427010, Kyunggi Do, South Korea

[4] Hyundai Elect Ind Co Ltd, LCD Div, Ichon 447701, Kyunggi Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 5A期

关键词：

tin oxide; TMT; ozone; CVD; oxygen vacancy;

D O I：

10.1143/JJAP.38.2917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O-3 The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10(-2) to 10(-3) Omega cm, and ranging mobility from 10.5 to 13.7 cm(2)/Vs.

引用

页码：2917 / 2920

页数：4

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