Anodic process for forming nanostructured metal-oxide coatings for large-value precise microfilm resistor fabrication

被引:28
作者
Mozalev, A
Surganov, A
Magaino, S
机构
[1] Kanagawa Ind Technol Res Inst, Joint Res Div, Ebina, Kanagawa 24304, Japan
[2] Belarusian State Univ Informat & Radioelect, Dept Microelect, Minsk 220027, BELARUS
关键词
anodizing; tantalum oxide; nanostructures; sheet resistance; temperature coefficient;
D O I
10.1016/S0013-4686(99)00096-1
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nanoscale metal-oxide coatings have been produced from double layer Ta-Al film combinations by anodizing underlying tantalum through pores in an initially formed anodic alumina. The coatings developed have been studied by SEM and AES and examined as alternative materials for microfilm resistor fabrication. Periodical net-like structure and nanoscale topography of the coatings were found to result in high sheet resistance (to 75 k Omega/square) as well as low temperature resistance coefficient (in the order of 10(-5) K-1). The phenomena are explained by existence in the films of specific quantum mechanisms caused by metal-insulator composition and ultra-fine periodical structure of the coatings developed here. Additional electrochemical treatment allows precise resistor adjustment of 30% to within 1% of desired value without changes in resistor design geometry. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:3891 / 3898
页数:8
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