High dielectric tunability in lead niobate pyrochlore films

被引：12

作者：

Mirsaneh, M. ^{[1
]}

Hayden, B. E. ^{[2
]}

Furman, E. ^{[1
]}

Perini, S. ^{[1
]}

Lanagan, M. T. ^{[1
]}

Reaney, I. M. ^{[3
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Univ Southampton, Sch Chem, Southampton SO17 1BJ, Hants, England

[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

TUNABLE DEVICE APPLICATIONS; BA1-XSRXTIO3; THIN-FILMS; CAPACITORS; OXIDE;

D O I：

10.1063/1.3687722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High throughput physical vapor deposition has been used to grow crystalline PbnNb2O5+n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (epsilon(r)) and dielectric loss (tan delta) were frequency independent between 100 Hz and 1 MHz and -60 degrees C-100 degrees C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb1.2Nb2O6.2, PN, Pb approximate to 38%) of similar to 26% (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan delta similar to 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior epsilon(r) of 419 (450 in BST and 160-220 in BZN) and 26% tunability (similar to 50% in BST and 3.5% in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687722]

引用

页数：3

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