Dielectric properties of MgO-doped compositionally graded multilayer barium strontium titanate films
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作者:
Cole, M. W.
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
Cole, M. W.
[2
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Ngo, E.
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
Ngo, E.
[2
]
Hirsch, S.
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
Hirsch, S.
[2
]
Okatan, M. B.
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Univ Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USAUniv Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
Okatan, M. B.
[1
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Alpay, S. P.
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Univ Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USAUniv Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
Alpay, S. P.
[1
]
机构:
[1] Univ Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
[2] USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
We have grown 5 mol % MgO-doped multilayered Ba1-xSrxTiO3 (BST) films having a nominal thickness of 220 nm with compositions of each layer as BST60/40, BST75/25, and BST90/10 (upgraded). We also fabricated undoped upgraded BST and uniform BST60/40 films for comparison. Results show that Mg-doping improves dielectric loss (tan delta=0.008) and yields better surface roughness (similar to 3.1 nm) compared to undoped upgraded BST. Mg-doped films displayed excellent temperature stability with temperature coefficient of capacitances of -0.94 and 1.14 ppt/degrees C from 20 to 90 degrees C and 20 to -10 degrees C, respectively. Mg doping resulted in a moderate dielectric tunability (29%) compared to undoped BST (65.5%) at 444 kV/cm. (C) 2008 American Institute of Physics.
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
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Joshi, PC
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Joshi, PC
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Ervin, MH
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Ervin, MH
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Wood, MC
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Wood, MC
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Pfeffer, RL
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
;
Nothwang, WD
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
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Hubbard, C
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
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Ngo, E
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
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Ervin, M
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
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Hubbard, C
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Hubbard, C
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Ngo, E
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Ngo, E
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Ervin, M
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Ervin, M
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Wood, M
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Wood, M
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Geyer, RG
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USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
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Joshi, PC
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Joshi, PC
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Ervin, MH
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Ervin, MH
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Wood, MC
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Wood, MC
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Pfeffer, RL
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
;
Nothwang, WD
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
;
Hubbard, C
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
;
Ngo, E
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
;
Ervin, M
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
机构:
USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
;
Hubbard, C
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Hubbard, C
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Ngo, E
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Ngo, E
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Ervin, M
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Ervin, M
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Wood, M
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Wood, M
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Geyer, RG
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机构:USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA