The dependence of dielectric properties on compositional variation for tunable device applications

被引：26

作者：

Cole, MW ^{[1
]}

Geyer, RG

机构：

[1] USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

[2] Natl Inst Stand & Technol, RF Technol Div, Boulder, CO 80303 USA

来源：

MECHANICS OF MATERIALS | 2004年 / 36卷 / 10期

关键词：

dielectric properties; deposition process; microwave measurements; film micro structure;

D O I：

10.1016/j.mechmat.2003.04.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The materials properties of undoped and low concentration Mg doped Ba0.6Sr0.4TiO3 (BST) thin films are reported. The films were fabricated on single crystal (1 0 0) MgO and Pt coated Si substrates via the metalorganic solution deposition (MOSD) technique using carboxylate-alkoxide precursors and post-deposition annealed at 800 degreesC (film/MgO substrates) and 750 degreesC (film/Pt-Si substrates). The dielectric properties were measured at 10 GHz using unpatterned/non-metallized films via a tuned coupled/split dielectric resonator system and at 100 kHz using metal-insulator-metal capacitors. The structure, microstructure, surface morphology and film/substrate compositional quality were analyzed and correlated to the films dielectric and insulating properties. The Mg doped BST films exhibited improved dielectric loss and insulating characteristics compared to the undoped BST thin films. The improved dielectric properties, low leakage current, and good tunability of the low level Mg doped BST thin films merits strong potential for utilization in microwave tunable devices. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1017 / 1026

页数：10

共 15 条

[1] The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films [J].

Chang, WT ;

Horwitz, JS ;

Carter, AC ;

Pond, JM ;

Kirchoefer, SW ;

Gilmore, CM ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 1999, 74 (07) :1033-1035

[2] The influence of Mg doping on the materials properties of Ba1-xSrxTiO3 thin films for tunable device applications [J].

Cole, MW ;

Joshi, PC ;

Ervin, MH ;

Wood, MC ;

Pfeffer, RL .

THIN SOLID FILMS, 2000, 374 (01) :34-41

[3] La doped Ba1-xSrxTiO3 thin films for tunable device applications [J].

Cole, MW ;

Joshi, PC ;

Ervin, MH .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6336-6340

[4] Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application [J].

Gopalan, S ;

Wong, CH ;

Balu, V ;

Lee, JH ;

Han, JH ;

Mohammedali, R ;

Lee, JC .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2123-2125

[5]

Horwitz JS, 1998, INTEGR FERROELECTR, V22, P799, DOI 10.1080/10584589808208049

[6] Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature [J].

Hwang, CC ;

Juang, MH ;

Lai, MJ ;

Jaing, CC ;

Chen, JS ;

Huang, S ;

Cheng, HC .

SOLID-STATE ELECTRONICS, 2001, 45 (01) :121-125

[7] Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications [J].

Joshi, PC ;

Cole, MW .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :289-291

[8] The effect of annealing on the structure and dielectric properties of BaxSr1-xTiO3 ferroelectric thin films [J].

Knauss, LA ;

Pond, JM ;

Horwitz, JS ;

Chrisey, DB ;

Mueller, CH ;

Treece, R .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :25-27

[9] The effect of grain and particle size on the microwave properties of barium titanate (BaTiO3) [J].

McNeal, MP ;

Jang, SJ ;

Newnham, RE .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3288-3297

[10] Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films [J].

Pontes, FM ;

Longo, E ;

Leite, ER ;

Varela, JA .

THIN SOLID FILMS, 2001, 386 (01) :91-98

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