Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

被引：21

作者：

Hwang, CC

Juang, MH

Lai, MJ

Jaing, CC

Chen, JS

Huang, S

Cheng, HC

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[4] Natl Sci Council, Precis Instrument Dev Ctr, Hsinchu 300, Taiwan

[5] Mosel Vitel Inc, Hsinchu 300, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 01期

关键词：

barium strontium titanate (BST); inter-diffusion; barrier layer; rapid-thermal anneal (RTA); low substrate temperature;

D O I：

10.1016/S0038-1101(00)00235-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue. rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found ill this: experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors. including high dielectric constant (epsilon (r) = 320). low leakage current (1.5 x 10(-8) A/cm(2)) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar + O-2 mixed ambient at a low substrate temperature (300 degreesC). (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：121 / 125

页数：5

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