Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects

被引：30

作者：

Bolotov, L ^{[1
]}

Tsuchiya, T

Nakamura, A

Ito, T

Fujiwara, Y

Takeda, Y

机构：

[1] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.59.12236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thickness-dependent changes in the electronic states of semimetal ErP islands grown on the InP(001) surface by organometallic vapor-phase epitaxy have been investigated by means of scanning tunneling microscopy/spectroscopy. The normalized differential conductance spectra show a semimetal behavior for the ErP islands (20-50 nm in size) with thickness larger than 3.4 nm, while the spectra taken for the islands thinner than 3.4 nm reveal a semiconducting gap varying to similar to 1 eV. The thickness dependence of the observed gap is explained by the energy gap between the electron sublevel and the hole sublevel calculated using a one-dimensional square-well potential model with infinite barriers. The results demonstrate a semimetal to semiconductor transition due to the quantum size effect on the semimetal ErP band structure with a band overlap of -0.3 eV. [S0163-1829(99)01020-6].

引用

页码：12236 / 12239

页数：4

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