Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy

被引:7
作者
Bolotov, L [1 ]
Tsuchiya, J [1 ]
Fujiwara, Y [1 ]
Takeda, K [1 ]
Nakamura, A [1 ]
机构
[1] NAGOYA UNIV, DEPT MAT SCI & ENGN, CHIKUSA KU, NAGOYA, AICHI 46401, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期
关键词
surface morphology; quantum dot; two-dimensional island; strained film; organometallic vapor phase epitaxy; semimetal-semiconductor interface; atomic force microscopy;
D O I
10.1143/JJAP.36.L1534
中图分类号
O59 [应用物理学];
学科分类号
摘要
First observation of ErP islands formed on InP(001) during Er-exposure by organometallic vapor phase epitaxy is demonstrated for 0.7-0.8ML coverage. Different features of the surface morphology for Er-exposed InP are observed depending on substrate temperatures. While large islands (200-300nm) are grown on the InP(001) surface at a substrate temperature of 530 degrees C, small dots (17-30nm) with the density of about 5 x 10(9) cm(-2) are formed at 580 degrees C. ErP islands are preferably grown along the [010] and [100] directions to decrease the lattice distortion.
引用
收藏
页码:L1534 / L1537
页数:4
相关论文
共 16 条
[1]   MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS [J].
ALLEN, SJ ;
TABATABAIE, N ;
PALMSTROM, CJ ;
MOUNIER, S ;
HULL, GW ;
SANDS, T ;
DEROSA, F ;
GILCHRIST, HL ;
GARRISON, KC .
SURFACE SCIENCE, 1990, 228 (1-3) :13-15
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE MATCHED GAAS/ERP0.6AS0.4/(001) AND (111) GAAS HETEROSTRUCTURES [J].
CAULET, J ;
LECORRE, A ;
GUENAIS, B ;
ROPARS, G ;
GUIVARCH, A .
JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) :309-313
[3]   MAGNETIC PROPERTIES OF 3-DIMENSIONALLY QUANTIZED SEMIMETALS [J].
CHU, HT .
PHYSICAL REVIEW B, 1973, 8 (04) :1296-1302
[4]   DRASTIC EFFECTS OF HYDROGEN FLOW-RATE ON GROWTH-CHARACTERISTICS AND ELECTRICAL OPTICAL-PROPERTIES OF INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TMIN AND TBP [J].
FUJIWARA, Y ;
FURUTA, S ;
MAKITA, K ;
ITO, Y ;
NONOGAKI, Y ;
TAKEDA, Y .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :544-548
[5]  
Fujiwara Y, 1996, INST PHYS CONF SER, V145, P149
[6]   EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(001) - THE ROLE OF SURFACE-DIFFUSION LENGTH [J].
GRANDJEAN, N ;
MASSJES, J .
JOURNAL OF CRYSTAL GROWTH, 1993, 134 (1-2) :51-62
[7]   Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors [J].
Jain, SC ;
Willander, M ;
Maes, H .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) :641-671
[8]   DEPENDENCE OF ERAS CLUSTERING AND ER SEGREGATION IN ERAS/GAAS HETEROSTRUCTURES ON GROWTH TEMPERATURE [J].
JOURDAN, N ;
YAMAGUCHI, H ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12B) :L1784-L1787
[9]   STRUCTURAL-ANALYSIS OF ERBIUM SHEET-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, WITH ION CHANNELING FOLLOWED BY MONTE-CARLO SIMULATION [J].
NAKATA, J ;
JOURDAN, N ;
YAMAGUCHI, H ;
TAKAHEI, K ;
YAMAMOTO, Y ;
KIDO, Y .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3095-3103
[10]  
PALSTR CJ, 1989, J VAC SCI TECHNOL B, V7, P747