Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy

被引：7

作者：

Bolotov, L ^{[1
]}

Tsuchiya, J ^{[1
]}

Fujiwara, Y ^{[1
]}

Takeda, K ^{[1
]}

Nakamura, A ^{[1
]}

机构：

[1] NAGOYA UNIV, DEPT MAT SCI & ENGN, CHIKUSA KU, NAGOYA, AICHI 46401, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期

关键词：

surface morphology; quantum dot; two-dimensional island; strained film; organometallic vapor phase epitaxy; semimetal-semiconductor interface; atomic force microscopy;

D O I：

10.1143/JJAP.36.L1534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First observation of ErP islands formed on InP(001) during Er-exposure by organometallic vapor phase epitaxy is demonstrated for 0.7-0.8ML coverage. Different features of the surface morphology for Er-exposed InP are observed depending on substrate temperatures. While large islands (200-300nm) are grown on the InP(001) surface at a substrate temperature of 530 degrees C, small dots (17-30nm) with the density of about 5 x 10(9) cm(-2) are formed at 580 degrees C. ErP islands are preferably grown along the [010] and [100] directions to decrease the lattice distortion.

引用

页码：L1534 / L1537

页数：4

共 16 条

[11] EFFECT OF STRAIN ON SURFACE-MORPHOLOGY IN HIGHLY STRAINED INGAAS FILMS [J].