Layer structure analysis of Er delta-doped InP by x-ray crystal truncation rod scattering

被引:10
作者
Takeda, Y
Fujita, K
Matsubara, N
Yamada, N
Ichiki, S
Tabuchi, M
Fujiwara, Y
机构
[1] Dept. of Mat. Sci. and Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-01, Furo-cho
关键词
D O I
10.1063/1.365591
中图分类号
O59 [应用物理学];
学科分类号
摘要
The layer structure and crystal structure of an Er delta-doped layer in InP are analyzed in a one monolayer (NIL) level by an x-ray crystal truncation rod (CTR) scattering measurement using synchrotron radiation. The Er delta-doped InP sample is prepared by organometallic vapor phase epitaxy using trimethylindium, tertiarybutylphosphine, and tris(methyl-cyclopentadienyl)erbium as source materials. The analysis is made by comparing the measured CTR spectra and theoretically generated ones assuming four possible crystal structures for the Er delta-doped layers. We reveal that the Er atoms in InP form the rocksalt structure ErP. In the analysis of the crystal structure the x-ray interference plays a vital role. Er distribution in the delta-doped layer is clearly resolved in 1 ML level. It is shown that the Er atoms are well confined in 5 ML(15 Angstrom) thickness. The total amount of Er atoms is 0.171 ML, which is quite close to 0.2 ML obtained by Rutherford backscattering measurement on the same sample. (C) 1997 American Institute of Physics.
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页码:635 / 638
页数:4
相关论文
共 13 条
[1]   DRASTIC EFFECTS OF HYDROGEN FLOW-RATE ON GROWTH-CHARACTERISTICS AND ELECTRICAL OPTICAL-PROPERTIES OF INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TMIN AND TBP [J].
FUJIWARA, Y ;
FURUTA, S ;
MAKITA, K ;
ITO, Y ;
NONOGAKI, Y ;
TAKEDA, Y .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :544-548
[2]  
Fujiwara Y, 1996, INST PHYS CONF SER, V145, P149
[3]  
FUJIWARA Y, 1995, T TECH ZURICH, V196, P621
[4]   EVALUATION OF THE ROUGHNESS OF A CRYSTAL-SURFACE BY X-RAY-SCATTERING .1. THEORETICAL CONSIDERATIONS [J].
HARADA, J .
ACTA CRYSTALLOGRAPHICA SECTION A, 1992, 48 :764-771
[5]  
HELLWEDGE KH, 1979, LANDOLTBORNSTEIN C, V7, P16
[6]   DEPENDENCE OF ERAS CLUSTERING AND ER SEGREGATION IN ERAS/GAAS HETEROSTRUCTURES ON GROWTH TEMPERATURE [J].
JOURDAN, N ;
YAMAGUCHI, H ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12B) :L1784-L1787
[7]   OVERGROWTH AND STRAIN IN MBE-GROWN GAAS/ERAS/GAAS STRUCTURES [J].
RALSTON, JD ;
WAGNER, J ;
FUCHS, F ;
HIESINGER, P ;
SCHMALZLIN, J .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :989-995
[8]   CRYSTAL TRUNCATION RODS AND SURFACE-ROUGHNESS [J].
ROBINSON, IK .
PHYSICAL REVIEW B, 1986, 33 (06) :3830-3836
[9]   NEGATIVE DIFFERENTIAL RESISTANCE IN ALAS/NIAL/ALAS HETEROSTRUCTURES - EVIDENCE FOR SIZE QUANTIZATION IN METALS [J].
TABATABAIE, N ;
SANDS, T ;
HARBISON, JP ;
GILCHRIST, HL ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1988, 53 (25) :2528-2530
[10]   Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering [J].
Tabuchi, M ;
Yamada, N ;
Fujibayashi, K ;
Takeda, Y ;
Kamei, H .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :671-675