Theoretical investigation of laser gain in AlGaInN quaternary quantum wells

被引:6
作者
Chow, WW [1 ]
Schneider, HC [1 ]
Fischer, AJ [1 ]
Allerman, AA [1 ]
机构
[1] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.1465523
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microscopic calculations of laser gain spectra are presented for AlGaInN wurtzite quantum-well structures that are under compressive, zero and tensile strain. It is found that the optical nonlinearities induced by the combination of strain, quantum-confined Stark effect and many-body Coulomb interactions give rise to optical behavior that can differ significantly from that in conventional semiconductor lasers. (C) 2002 American Institute of Physics.
引用
收藏
页码:2451 / 2453
页数:3
相关论文
共 10 条
[1]   Growth and applications of Group III nitrides [J].
Ambacher, O .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710
[2]  
AURNER ME, 1999, APPL PHYS LETT, V75, P3315
[3]   Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells [J].
Chow, W ;
Kira, M ;
Koch, SW .
PHYSICAL REVIEW B, 1999, 60 (03) :1947-1952
[4]   Comparison of experimental and theoretical GaInP quantum well gain spectra [J].
Chow, WW ;
Smowton, PM ;
Blood, P ;
Girndt, A ;
Jahnke, F ;
Koch, SW .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :157-159
[5]  
Chow WW., 1999, SEMICONDUCTOR LASER, DOI 10.1007/978-3-662-03880-2
[6]   k center dot p method for strained wurtzite semiconductors [J].
Chuang, SL ;
Chang, CS .
PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504
[7]   Lattice and energy band engineering in AlInGaN/GaN heterostructures [J].
Khan, MA ;
Yang, JW ;
Simin, G ;
Gaska, R ;
Shur, MS ;
zur Loye, HC ;
Tamulaitis, G ;
Zukauskas, A ;
Smith, DJ ;
Chandrasekhar, D ;
Bicknell-Tassius, R .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1161-1163
[8]   Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells [J].
Kim, HS ;
Lin, JY ;
Jiang, HX ;
Chow, WW ;
Botchkarev, A ;
Morkoç, H .
APPLIED PHYSICS LETTERS, 1998, 73 (23) :3426-3428
[9]  
Nakamura S., 1997, BLUE LASER DIODE GAN
[10]   Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells [J].
Wang, J ;
Jeon, JB ;
Sirenko, YM ;
Kim, KW .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) :728-730