Enhanced exchange biasing in ion-beam sputtered bottom spin-valve films

被引：7

作者：

Mao, M ^{[1
]}

Funada, S ^{[1
]}

Hung, CY ^{[1
]}

Schneider, T ^{[1
]}

Miller, M ^{[1
]}

Tong, HC ^{[1
]}

Qian, C ^{[1
]}

Miloslavsky, L ^{[1
]}

机构：

[1] Read Rite Corp, Fremont, CA 94550 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

exchange bias; ion beam deposition; bottom spin-valve; underlayer; IrMn;

D O I：

10.1109/20.800706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

IrMn exchange biased bottom spin-valve films of structure Ta/underlayer/IrMn/CoFe/Cu/CoFe/NiFe/Ta were prepared using ion beam deposition techniques. The exchange bias field exhibits strong underlayer thickness dependence. For the first time, a large exchange energy of 0.29 erg/cm(2) was measured in spin-valve films exchange biased by a disordered antiferromagnet, comparable to the values usually obtained in spin-valve films exchange biased by an ordered antiferromagnet. We have conducted a comparative study on both bottom and top exchange biased spin-valve and ferromagnetic/antiferromagnetic bilayer films. The results indicate that the exchange field obeys very well the inverse pinned layer thickness law over a thickness range from 200 Angstrom down to 10 Angstrom. The exchange energy for bottom spin-valve films is, however, a factor of two larger than that for top spin-valve films. When normalized, the exchange field exhibits the same temperature dependence for both bottom and top spin-valve films. The enhancement in exchange biasing is mainly attributed to an enhanced texture for fcc (111) crystallographic orientation of the IrMn layer in bottom spin-valve films.

引用

页码：3913 / 3915

页数：3

共 5 条

[1] Studies of deposition order anomaly of exchange coupling in bilayers and trilayers of NiFe and CoO [J].