Ion beam sputtered spin-valve films with improved giant magnetoresistance response

被引：10

作者：

Mao, M ^{[1
]}

Miller, M

Johnson, P

Tong, HC

Qian, C

Miloslavsky, L

Hung, CY

Wang, J

Hegde, H

机构：

[1] ReadRite Corp, Fremont, CA 94539 USA

[2] Veeco Instruments Inc, Plainview, NY 11803 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large value of giant magnetoresistance Delta R/R=9% with an exchange field H-ex = 350 Oe has been measured from simple NiFe/CoFe/Cu/CoFe/IrMn top spin-valve films prepared by ion beam deposition (IBD) techniques. The exchange biasing was greatly enhanced when a synthetic pinned layer, CoFe/Ru/CoFe, is used in the spin-valve structures. Apparent exchange field values in excess of 2000 Oe and Delta R/R values above 8% have been obtained in synthetic spin-valve films. These IBD spin-valve films show excellent thermal stability and they are suitable for the applications in high density magnetic recording heads. (C) 1999 American Institute of Physics. [S0021-8979(99)34708-3].

引用

页码：4454 / 4456

页数：3

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