Muonium as a shallow center in GaN

被引:39
作者
Shimomura, K [1 ]
Kadono, R
Ohishi, K
Mizuta, M
Saito, M
Chow, KH
Hitti, B
Lichti, RL
机构
[1] High Energy Accelerator Res Ork KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
[2] NEC Corp Ltd, Syst Devices & Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] TRIUMF, Vancouver, BC V6T 2A3, Canada
[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[5] Grad Univ Adv Studies, Sch Math & Phys Sci, Tsukuba, Ibaraki, Japan
[6] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada
基金
加拿大自然科学与工程研究理事会; 美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.92.135505
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the <0001> direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c axis. Its small ionization energy (less than or equal to14 meV) and small hyperfine parameter (similar to10(-4) times the vacuum value) indicate that muonium in one of its possible sites produces a shallow state, raising the possibility that the analogous hydrogen center could be a source of n-type conductivity in as-grown GaN.
引用
收藏
页码:135505 / 1
页数:4
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