Muonium as a shallow center in GaN

被引：39

作者：

Shimomura, K ^{[1
]}

Kadono, R

Ohishi, K

Mizuta, M

Saito, M

Chow, KH

Hitti, B

Lichti, RL

机构：

[1] High Energy Accelerator Res Ork KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

[2] NEC Corp Ltd, Syst Devices & Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] TRIUMF, Vancouver, BC V6T 2A3, Canada

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[5] Grad Univ Adv Studies, Sch Math & Phys Sci, Tsukuba, Ibaraki, Japan

[6] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 13期

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.92.135505

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the <0001> direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c axis. Its small ionization energy (less than or equal to14 meV) and small hyperfine parameter (similar to10(-4) times the vacuum value) indicate that muonium in one of its possible sites produces a shallow state, raising the possibility that the analogous hydrogen center could be a source of n-type conductivity in as-grown GaN.

引用

页码：135505 / 1

页数：4

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