Sites and motion of Mu- defect centers in n-type gallium nitride

被引：9

作者：

Lichti, RL ^{[1
]}

Cox, SFJ

Dawdy, MR

Head, TL

Hitti, B

Molnar, RJ

Schwab, C

Vaudo, RP

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

[3] UCL, London WCE 6BT, England

[4] TRIUMF, Vancouver, BC V6T 2A3, Canada

[5] MIT, Lincoln Lab, Lexington, MA 02420 USA

[6] CNRS, PHASE, F-67037 Strasbourg, France

[7] Adv Technol Mat Inc, Danbury, CT 06810 USA

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 289卷

基金：

美国国家科学基金会;

关键词：

muonium; hydrogen; GaN; level-crossing resonance; defect mobility;

D O I：

10.1016/S0921-4526(00)00247-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the sites and motional properties of Mu(-) defect centers in GaN using muon nuclear-quadrupole level-crossing resonances (QLCR) and zero-field muon-spin depolarization measurements. The QLCR spectra imply that Mu(-) occupies interstitial locations next to Ga atoms, consistent with the two inequivalent Ga anti-bonding sites for the Wurtzite structure. The Mu(-) related depolarization shows an increase in average dipolar fields near 200 K and indicates motion above 500 K. We discuss the properties of the two separate Mu(-) states obtained from a model-dependent constrained fit to the zero-field data. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：542 / 545

页数：4

共 10 条

[1] HYDROGEN DEFECT STATES IN GALLIUM-ARSENIDE - AB-INITIO CALCULATIONS [J].