Positively charged muonium centers in aluminum and gallium nitrides

被引：11

作者：

Lichti, RL ^{[1
]}

Cox, SFJ

Davis, EA

Hitti, B

Sjue, SKL

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

[3] UCL, Dept Phys & Astron, London WCE 6BT, England

[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England

[5] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

基金：

英国工程与自然科学研究理事会;

关键词：

muonium; hydrogen; GaN; AlN; defect mobility;

D O I：

10.1016/S0921-4526(01)00657-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Mu(+) defect centers in AlN and GaN are studied using muon nuclear-quadrupole level-crossing resonance (QLCR) and zero-field muon spin depolarization measurements. The dominant Mu(+) center is highly mobile, but QLCR spectra identify a second static Mu(+) state at AB(parallel to)(N) sites in both, nitrides. This state becomes mobile above 800 K in AlN, but converts to a Mu(-) above 200 K in GaN. Zero-field data characterize local fields and motional properties for this state in AlN. Above 1100 K the mobile Mu(+) in AlN shows strong interactions and traps at another defect. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：73 / 76

页数：4

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