Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis

被引：69

作者：

Sanada, N ^{[1
]}

Yamamoto, A ^{[1
]}

Oiwa, R ^{[1
]}

Ohashi, Y ^{[1
]}

机构：

[1] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2004年 / 36卷 / 03期

关键词：

buckminsterfullerene; XPS; polytetrafluoroethylene; depth profiling;

D O I：

10.1002/sia.1680

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have applied sputtering using a buckminsterfullerene (C-60) ion beam for XPS analysis. A practical sputter rate of 2.4 nm min(-1) for SiO2 was obtained for sputtering an area of 5 mm x 5 mm using a 5 kV C-60 ion beam with an energy of 83 eV per carbon atom. Extremely low sputtering degradation of polytetrafluoroethylene was observed in these conditions. The results were compared with argon ion beam energies of 500 V and 5 kV. These are the first results utilizing a C60 ion beam for XPS analysis with limited sputtering damage. Copyright (C) 2004 John Wiley Sons, Ltd.

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页码：280 / 282

页数：3

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