Nanoscale PtSi Tips for Conducting Probe Technologies

被引：60

作者：

Bhaskaran, Harish ^{[1
]}

Sebastian, Abu ^{[1
]}

Despont, Michel ^{[1
]}

机构：

[1] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2009年 / 8卷 / 01期

基金：

欧洲研究理事会;

关键词：

Conducting probes; nanoscale conduction; nanoscale wear; PHASE-CHANGE MEDIA; DATA-STORAGE;

D O I：

10.1109/TNANO.2008.2005199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to improve the conduction and wear properties of nanometric conducting tips by forming silicides of Pt at the tip apex is presented. Tips with PtSi apexes are fabricated in conjunction with standard Si tips. Wear measurements are carried out on both tip types of similar geometries, and a one-on-one comparison between Si and PtSi at the nanoscale is shown for the first time. Both the wear properties on tetrahedral amorphous carbon and the conduction on Au of the PtSi tip apexes are shown to be superior to the Si tips.

引用

页码：128 / 131

页数：4

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