Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

被引：100

作者：

de la Rosa, Cesar J. Lockhart ^{[1
,2
]}

Sun, Jie ^{[1
]}

Lindvall, Niclas ^{[1
]}

Cole, Matthew T. ^{[3
]}

Nam, Youngwoo ^{[1
]}

Loffler, Markus ^{[4
]}

Olsson, Eva ^{[4
]}

Teo, Kenneth B. K. ^{[5
]}

Yurgens, August ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, SE-41296 Gothenburg, Sweden

[2] Chalmers, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[3] Univ Cambridge, Elect Engn Div, Dept Engn, Cambridge CB3 0FA, England

[4] Chalmers, Dept Appl Phys Microscopy & Microanal, SE-41296 Gothenburg, Sweden

[5] AIXTRON Nanoinstruments Ltd, Cambridge CB24 4FQ, England

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 02期

基金：

瑞典研究理事会;

关键词：

COPPER CATALYST; FILMS;

D O I：

10.1063/1.4775583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H-2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling-and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775583]

引用

页数：4

共 24 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[3] Graphene for CMOS and Beyond CMOS Applications [J].

Banerjee, Sanjay K. ;

Tutuc, Emanuel ;

Basu, Dipanjan ;

Kim, Seyoung ;

Reddy, Dharmendar ;

MacDonald, Allan H. .

PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2032-2046

[4] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[5] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[6]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]

[7] Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition [J].

De Arco, Lewis Gomez ;

Zhang, Yi ;

Kumar, Akshay ;

Zhou, Chongwu .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (02) :135-138

[8] Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum [J].

Gao, Libo ;

Ren, Wencai ;

Xu, Huilong ;

Jin, Li ;

Wang, Zhenxing ;

Ma, Teng ;

Ma, Lai-Peng ;

Zhang, Zhiyong ;

Fu, Qiang ;

Peng, Lian-Mao ;

Bao, Xinhe ;

Cheng, Hui-Ming .

NATURE COMMUNICATIONS, 2012, 3

[9] Large-scale pattern growth of graphene films for stretchable transparent electrodes [J].

Kim, Keun Soo ;

Zhao, Yue ;

Jang, Houk ;

Lee, Sang Yoon ;

Kim, Jong Min ;

Kim, Kwang S. ;

Ahn, Jong-Hyun ;

Kim, Philip ;

Choi, Jae-Young ;

Hong, Byung Hee .

NATURE, 2009, 457 (7230) :706-710

[10] Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric [J].

Kim, Seyoung ;

Nah, Junghyo ;

Jo, Insun ;

Shahrjerdi, Davood ;

Colombo, Luigi ;

Yao, Zhen ;

Tutuc, Emanuel ;

Banerjee, Sanjay K. .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

← 1 2 3 →